Boron Nitride Field Emitter Using Micro-Fabricated Gate Technology (Boron Nitride)
Motivation
- Current field emission technology is too susceptible to environmental degradation
Approach
- Use boron nitride, a material which is very robust to high pressure environments and atomic oxygen, along with low turn-on electric fields
- Develop micro-fabricated gates to extract electrons at low voltage relative to mechanical grids
Results
- Phase-II STTR completed
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